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1D metals for 2D electronics

delete2024-07-03
delete1
PRE
AI
W
Wouter Jolie
T
Thomas Michely *
DOI：10.1038/s41565-024-01708-zdelete
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摘要

摘要

En 中文
A metallic line defect in a layer of molybdenum disulfide can serve as an atomically narrow gate electrode demonstrating how to further miniaturize two-dimensional field effect transistors.
Keyword:
MOS2 TRANSISTORS

期刊

Nature Nanotechnology 封面图
Nature Nanotechnology
IF:
34.9
论文数:
4.8K
被引数:
8.1W

机构

U
University of Cologne
学者数:
3.0W
论文数: 2.1W
被引数: 2.4W
引用论文

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