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2D Dual Gate Field-Effect Transistor Enabled Versatile Functions
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DOI：10.1002/smll.202304173.png)
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Advanced computing technologies such as distributed computing and the Internet of Things require highly integrated and multifunctional electronic devices. Beyond the Si technology, 2D-materials-based dual-gate transistors are expected to meet these demands due to the ultra-thin body and the dangling-bond-free surface. In this work, a molybdenum disulfide (MoS2) asymmetric-dual-gate field-effect transistor (ADGFET) with an In2Se3 top gate and a global bottom gate is designed. The independently controlled double gates enable the device to achieve an on/off ratio of 106 with a low subthreshold swing of 94.3 mV dec-1 while presenting a logic function. The coupling effect between the double gates allows the top gate to work as a charge-trapping layer, realizing nonvolatile memory (105 on/off ratio with retention time over 104 s) and six-level memory states. Additionally, ADGFET displays a tunable photodetection with the responsivity reaching the highest value of 857 A W-1, benefiting from the interface coupling between the double gates. Meanwhile, the photo-memory property of ADGFET is also verified by using the varying exposure dosages-dependent illumination. The multifunctional applications demonstrate that the ADGFET provides an alternative way to integrate logic, memory, and sensing into one device architecture. This paper presents a MoS2-based asymmetric dual-gate field-effect transistor (ADGFET) with a small top gate and a global bottom gate. Taking advantage of independent gate control and strong interaction between gates, the device demonstrates basic logic function, while enabling nonvolatile memory and tunable photoresponse. The ADGFET shows potential for high-performance and multifunctional applications in future computing architecture.image
Keyword:
2D materials
floating gate
logic gates
nonvolatile memory
phototransistors
期刊
IF:
12.1
论文数:
3.0W
被引数:
16.4W
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