arrow
返回

2D Ferroic Materials for Nonvolatile Memory Applications

delete2024-02-29
delete13
PRE
AI
H
Hao Wang
Y
Yao Wen
H
Hui Zeng
Z
Ziren Xiong
Y
Yangyuan Tu
H
Hao Zhu
R
Ruiqing Cheng
L
Lei Yin
J
Jian Jiang
B
Baoxing Zhai
C
Chuansheng Liu
C
Chongxin Shan *
何
何军 (Jun He) *
DOI:10.1002/adma.202305044delete
delete原文链接
delete原文求助
delete分享
delete收藏
摘要

摘要

En 中文
The emerging nonvolatile memory technologies based on ferroic materials are promising for producing high-speed, low-power, and high-density memory in the field of integrated circuits. Long-range ferroic orders observed in 2D materials have triggered extensive research interest in 2D magnets, 2D ferroelectrics, 2D multiferroics, and their device applications. Devices based on 2D ferroic materials and heterostructures with an atomically smooth interface and ultrathin thickness have exhibited impressive properties and significant potential for developing advanced nonvolatile memory. In this context, a systematic review of emergent 2D ferroic materials is conducted here, emphasizing their recent research on nonvolatile memory applications, with a view to proposing brighter prospects for 2D magnetic materials, 2D ferroelectric materials, 2D multiferroic materials, and their relevant devices. 2D ferroic materials with ultrathin thickness and atomically smooth interface are promising candidates for constructing novel memory devices. This review surveys recent progress and proposes future prospects on 2D ferroic materials for nonvolatile memory applications, including 2D spintronic devices, 2D ferroelectric devices, and 2D multiferroic devices. image
Keyword:
2D materials
ferroelectrics
magnets
multiferroics
nonvolatile memory

期刊

Advanced Materials 封面图
Advanced Materials
IF:
26.8
论文数:
3.4W
被引数:
46.0W

机构

W
wuhan university
学者数:
8.1W
论文数: 5.8W
被引数: 70
引用论文

引用论文

Deterministic switching of a perpendicularly polarized magnet using unconventional spin-orbit torques in WTe2
err2022-06-16
err107
PREAI
errKao, I-Hsuan; Muzzio, Ryan; Zhang, Hantao; Zhu, Menglin; Gobbo, Jacob; Yuan, Sean; Weber, Daniel; Rao, Rahul; Li, Jiahan; Edgar, James H.; Goldberger, Joshua E.; Yan, Jiaqiang; Mandrus, David G.; Hwang, Jinwoo; Cheng, Ran; Katoch, Jyoti; Singh, Simranjeet
err分享
err收藏
Early electronic screen exposure and autistic-like symptoms
err2018-01-01
err0
errOAAI
errDonna Hermawati; Farid Agung Rahmadi; Tanjung Ayu Sumekar; Tri Indah Winarni
err分享
err收藏
Giant Enhancements of Perpendicular Magnetic Anisotropy and Spin-Orbit Torque by a MoS2 LayerMoS2层对垂直磁各向异性和自旋轨道转矩的巨大增强
err2019-04-08
err71
PREAI
errXie, Qidong; Lin, Weinan; Yang, Baishun; Shu, Xinyu; Chen, Shaohai; Liu, Liang; Yu, Xiaojiang; Breese, Mark B. H.; Zhou, Tiejun; Yang, Ming; Zhang, Zheng; Wang, Shijie; Yang, Hongxin; Chai, Jianwei; Han, Xiufeng; Chen, Jingsheng
err分享
err收藏
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3超薄二维层状半导体In2Se3中的相互关联的面内和面外铁电性
err2018-02-05
err613
PREAI
errCui, Chaojie; Hu, Wei-Jin; Yan, Xingu; Addiego, Christopher; Gao, Wenpei; Wang, Yao; Wang, Zhe; Li, Linze; Cheng, Yingchun; Li, Peng; Zhang, Xixiang; Alshareef, Husam N.; Wu, Tom; Zhu, Wenguang; Pan, Xiaoqing; Li, Lain-Jong
err分享
err收藏
学者 查看更多内容