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2D-vanadium carbide MXene: Influence of synthesis methods, etching agents, reaction time, and temperature on structural properties

delete2026-05-23
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PRE
AI
F
Fatemeh Alahvirdi
L
Leila Fallah Kelishomi
M
Masoud Jamshidi *
R
Reza Ghamarpoor *
DOI:10.1016/j.mseb.2026.119411delete
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Abstract

Abstract

En 中文
This study investigates the impact of various synthesis methods, etching agents, reaction time, and temperature on the structural properties of 2D-Vanadium Carbide MXene (V2C-MXene). The primary objective is to identify the optimal conditions for synthesizing MXene with improved properties. Two synthesis methods, Sol-gel and Hydrothermal, using different etching agents including LiF, NaF, and a LiF:NaF mixture, were employed to remove the aluminum layers from the MAX-phase V2AlC and produce the desired two-dimensional MXene structures. Comparative results show that samples etched with NaF under Hydrothermal conditions (NV1 to NV3) exhibited specific surface areas of 2.87, 5.25, and 3.40 m2/g, respectively, which are significantly higher than those of LiF-etched samples (LV1 to LV3), which had specific surface areas ranging from 1.22 to 1.88 m2/g. Additionally, the samples etched for 5 days with NaF (NV2) displayed the best layered structure with the most prominent 002 peaks in XRD and minimal changes in the 103 and 002 diffraction peaks. FTIR results show a reduction in the intensity of OH peaks in NV2, alongside the formation of V--O and V-C bonds, confirming surface modifications. This study demonstrates that NaF, particularly via the hydrothermal method, leads to a higher specific surface area and improved layered MXene structures. These structural characteristics suggest potential for future investigations into advanced applications, such as energy storage and catalysis.
Keywords:
V2C-MXene
Synthesis methods
Etching agents
Layered nanostructures

Journal

M
Materials Science and Engineering B-Advanced Functional Solid-State Materials
IF:
4.6
Papers:
6.4K
Citations:
2.0W

Organization

I
iran university science & technology
Scholars:
249
Papers: 124
Citations: 0
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