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A charge trap-based MoSe2 device emulating bio-realistic synaptic functionalities

delete2024-11-18
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PRE
AI
T
Tamkeen Farooq
S
Sumit Sharma
S
Shubham Bhatt
S
Samaresh Das
R
Rahul Mishra *
DOI:10.1088/1361-6463/ad8f41delete
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摘要

摘要

En 中文
Synaptic devices based on two-dimensional (2D) materials are promising toward the development of high-performance and low-power neuromorphic systems. In this study, we report a single-channel, three-terminal-based nonvolatile and multistate device based on 2D MoSe2. The device operates on the principle of trapping and detrapping of electrons at the MoSe2/SiO2 interface, in response to an applied gate voltage, resulting in a nonvolatile modulation of the threshold voltage. The memory behavior is highly reproducible as verified for around 100 cycles of the gate voltage sweep. The multistate behavior of the MoSe2 device was exploited to demonstrate the characteristics of the biological synapse. The device exhibits various synaptic functions, such as potentiation, depression, spike rate-dependent plasticity, spike magnitude-dependent plasticity, and the ability to transition from short-term to long-term memory. The bio-realistic synaptic behavior of the MoSe2 device underscores its promising potential for neuromorphic hardware.
Keyword:
MoSe2
bio-realistic
charge trap device
2d neuromorphic device

期刊

Journal of Physics D-Applied Physics 封面图
Journal of Physics D-Applied Physics
IF:
3.2
论文数:
2.6W
被引数:
4.9W

机构

I
indian institute of technology system (iit system)
学者数:
9.5W
论文数: 9.9W
被引数: 93
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