.png){kind=icon}
返回
A complementary two-dimensional material-based one instruction set computer
.png){kind=icon}
PRE
AI
DOI：10.1038/s41586-025-08963-7.png)
.png){kind=icon}
.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
Silicon has enabled advancements in semiconductor technology through miniaturization, but scaling challenges necessitate the exploration of new materials1. Two-dimensional (2D) materials, with their atomic thickness and high carrier mobility, offer a promising alternative2–5. Although significant progress has been made in wafer-scale growth6–8, high-performance field-effect transistors9–20 and circuits based on 2D materials21–23, achieving complementary metal–oxide–semiconductor (CMOS) integration remains a challenge. Here, we present a 2D one instruction set computer based on CMOS technology, leveraging the heterogeneous integration of large-area n-type MoS2 and p-type WSe2 field-effect transistors. By scaling the channel length, incorporating a high-κ gate dielectric and optimizing material growth and device postprocessing, we tailored the threshold voltages for both n- and p-type 2D field-effect transistors, achieving high drive currents and reduced subthreshold leakage. This enabled circuit operation below 3 V with an operating frequency of up to 25 kHz, which was constrained by parasitic capacitances, along with ultra-low power consumption in the picowatt range and a switching energy as low as approximately 100 pJ. Finally, we projected the performance of the one instruction set computer and benchmarked it against state-of-the-art silicon technology using an industry-standard SPICE-compatible BSIM-BULK model. This model was calibrated with experimental data that incorporate device-to-device variations. Although further advances are needed, this work marks a significant milestone in the application of 2D materials to microelectronics. A two-dimensional one instruction set computer has been fabricated based on complementary metal–oxide–semiconductor technology by leveraging the heterogeneous integration of large-area n-type MoS2 and p-type WSe2 field-effect transistors.
期刊
IF:
48.5
论文数:
3.2W
被引数:
96.5W
机构
引用论文
Rapid Flame Synthesis of Atomically Thin MoO3 down to Monolayer Thickness for Effective Hole Doping of WSe2.png)
NANO LETTERS
NANO LETTERSIF9.1
PREAI
分享收藏Integrated Circuits and Logic Operations Based on Single-Layer MoS2基于单层MoS2的集成电路和逻辑运算ACS NANO
OAAI
ACS NANOIF16
OAAI分享收藏Approaching the quantum limit in two-dimensional semiconductor contacts在二维半导体接触中接近量子极限Nature
NatureIF48.5
PREAI
分享收藏Insulators for 2D nanoelectronics: the gap to bridge用于2D纳米电子学的绝缘体: 桥接的间隙NATURE COMMUNICATIONSOAAI
NATURE COMMUNICATIONSIF15.7
OAAI分享收藏Ultralow contact resistance between semimetal and monolayer semiconductors半金属与单层半导体之间的超低接触电阻Nature
NatureIF48.5
PREAI
分享收藏
查看更多内容