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A Fluorographene-Based Synaptic Transistor
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DOI：10.1002/admt.201900422.png)
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Exploring brain-inspired synaptic devices has recently become a new focus of research in nanoelectronic communities. In this emerging field, incorporating 2D materials into three-terminal synaptic transistors has brought various advantages. However, achieving a stable and long-term weight-modulation in these synaptic transistors, which are typically based on interface charge storage, is still a challenge due to the nature of their spontaneous relaxation. The application of an atomically thin fluorographene layer into the synaptic junction region suppresses this issue and improves the efficiency, tunability, and symmetry of the synaptic plasticity as well as establishing a stable weight-regulation paradigm. These unique properties can be attributed to the dipolar rotation of C-F in fluorographene. To obtain a better physical understanding, a vacancy-dependent C-F dipolar rotation model is proposed and supported by hysteresis analysis and density functional theory calculations. As proposed and demonstrated, the unique fluorographene-based synaptic transistor may be a promising building block for constructing efficient neuromorphic computing hardware.
Keyword:
fluorographene
long-term potentiation
low-damage fluorination
spike timing dependent plasticity
synaptic transistors
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