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A nonvolatile memory element for integration with superconducting electronics
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DOI：10.1063/5.0175432.png)
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We demonstrate a nonvolatile cryogenic magnetic memory element needed to support emerging superconducting- and quantum-computing technologies. The central element is a switchable tri-layer thin film magnetic dot comprising two semiconducting ferromagnetic GdxSm1-xN layers separated by an exchange-blocking Al layer. The materials are explored for their tunable magnetic responses, the potential to engineer compensating magnetic moments in the anti-parallel tri-layers. The stability of the parallel and anti-parallel states and the reproducibility over repeated cycles are also demonstrated. We show that the tri-layer stacks can be formed into dots as small as 4 mu m diameter, without affecting their magnetic behavior.
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3.6
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10.4W
被引数:
17.8W
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