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A novel method for interfacial energy gap determination
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DOI：10.1038/s41598-024-67987-7.png)
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摘要
En 中文
A precise quantification of energy gap for a molecular semiconductor is crucial. However, there has always been a lack of a suitable method which results in an inaccurate measurement. In this research, a three-terminal vertical structure (Al/AlOX/Au/ molecular semiconductor/Al), named hot electron transistor has been designed to be the most powerful method for energy gap determination. By analysing the IC-hot-VEB curves, the electron injected barrier and hole injected barrier can be extracted. In combination of the both, the energy gap of four objects, including PBDB-T-2Cl, C60, PTCDA, and Alq3, has been determined finally.
Keyword:
Molecular semiconductor
Energy gap
Electron injection barrier
Hole injection barrier
Hot electron spectroscopy
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期刊
IF:
3.9
论文数:
27.9W
被引数:
83.5W
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