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A Physical Unclonable Function With Redox-Based Nanoionic Resistive Memory
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DOI：10.1109/TIFS.2017.2756562.png)
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摘要
En 中文
Emerging non-volatile reduction-oxidation (redox)-based resistive switching memories (ReRAMs) exhibit a unique set of characteristics that make them promising candidates for the next generation of low-cost, low-power, tiny, and secure physical unclonable functions (PUFs). Their underlying stochastic ionic conduction behavior, intrinsic nonlinear current-voltage characteristics, and their well-known nano-fabrication process variability might normally be considered disadvantageous ReRAM features. However, using a combination of a novel architecture and special peripheral circuitry, this paper exploits these non-idealities in a physical one-way function, nonlinear resistive PUF, potentially applicable to a variety of cyber-physical security applications. We experimentally verify the performance of valency change mechanism (VCM)-based ReRAM in nano-fabricated crossbar arrays across multiple dies and runs. In addition to supporting a massive pool of challenge-response pairs (CRPs), using a combination of experiment and simulation our proposed PUF exhibits a reliability of 98.67%, a uniqueness of 49.85%, a diffuseness of 49.86%, a uniformity of 47.28%, and a bit-aliasing of 47.48%.
Keyword:
Physical unclonable function
redox-based resistive switching memory
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论文数:
5.3K
被引数:
2.3W
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引用论文
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges基于氧化还原的电阻开关存储器-纳米离子机制，前景和挑战.png)
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