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A plasmon-electron addressable and CMOS compatible random access memory

delete2025-05-09
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OA
AI
S
S. R. Greig *
C
C. J. Firby
T
Triratna Muneshwar
H
H. S. Alagoz
E
Eric Hopmann
B
B. N. Carnio
M
Mingyuan Zhang
G
Grace C. Ciarniello
C
Cadien, Kenneth
A
A. Y. Elezzabi
DOI：10.1126/sciadv.adr1172delete
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摘要

摘要

En 中文
数据生成和存储的快速增长带来了巨大挑战，需要将计算任务从传统的电荷基设备转向高速光学替代方案。光子辅助或等离激元辅助存储器件作为促进更快速读写操作的有前景的解决方案应运而生。通过使用表面等离激元激子进行写入操作，我们可以通过测量夹在Au薄膜电极之间的HfO2铁电材料薄层中的隧穿电流来动态读取存储状态。我们的等离激元寻址存储平台在纳米电子和纳米等离激元系统中均提供多功能性，展示了具有变革计算和数据处理的潜力的强大混合架构。
Keyword:
THIN-FILMS
FERROELECTRICITY
PHOTONICS
BEHAVIOR

期刊

Science Advances 封面图
Science Advances
IF:
12.5
论文数:
2.1W
被引数:
18.1W

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引用论文

引用论文

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