A probabilistic model for dislocation channeling in irradiated FCC metals: the effects of stacking fault energy

2026-06-27

PRE

Yuang Du

Jiaqi Fu

Haonan Sui

Jianxiang Wang

LiRong Chen *

张隐 (Yin Zhang) *

段慧玲 (Huiling Duan)

DOI：10.1016/j.ijplas.2026.104756

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• A probability model for cross-slip vs obstacle-cut governed by SFE was proposed. • The intrinsically inhomogeneous distribution of defects is spatially correlated. • Channel width scales with correlation length of this distribution in single crystal. • Model explains how higher SFE reduces deformation localization in experiments for the first time.

A probabilistic model for dislocation channeling in irradiated FCC metals: the effects of stacking fault energy

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