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A rubbery semiconducting heterojunction film for fully rubbery multiplexed near-infrared phototransistor arrays
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DOI：10.1126/sciadv.aee2602.png)
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Abstract
En 中文
High-sensitivity photodetecting semiconductors with intrinsic stretchability and excellent charge carrier collection efficiency are imperative for the advancement of rubbery phototransistors. However, the scalable manufacturing of such materials into high-performance, multiplexed rubbery near-infrared phototransistor arrays remains challenging. Herein, we report a highly doped, rubbery semiconducting nanofilm with a unique nanoweb structure, fabricated by precisely controlling the composition of a ternary blend, comprising a semiconducting polymer (DPP-TT), a molecular dopant (F4TCNQ), and an elastic matrix (polyurethane). This unique architecture provides both high charge carrier mobility and exceptional mechanical stretchability. The developed rubbery phototransistors and their multiplexed arrays maintain electrical functionality even under 50% strain. Notably, the multiplexed phototransistor array maintains high imaging fidelity, capable of reproducing well-defined patterns even in deformed states. Furthermore, we demonstrate the application of this imaging system as a two-dimensional stretchable barcode, leveraging its multichannel, illumination-dependent responses. This work provides a viable pathway for the scalable production of high-performance rubbery optoelectronics.
Keywords:
rubbery semiconducting nanofilm
near-infrared phototransistor arrays
stretchable optoelectronics
multiplexed imaging
high-sensitivity photodetection
Journal
IF:
12.5
Papers:
2.0W
Citations:
18.1W
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Cited Papers