.png){kind=icon}
.png){kind=icon}
Return
Abrupt and Gradual Resistive Switching in Interface-Modified IGZO Memristors
.png){kind=icon}
OA
AI
K
C
M
K
U
A
DOI：10.1002/aelm.70530.png)
.png){kind=icon}
.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Indium gallium zinc oxide (IGZO) is a well-established channel material for thin-film transistors and has also emerged as a promising active layer for memristor applications. Further, IGZO memristors can exhibit both abrupt and gradual switching behaviors, which offer enhanced adaptability for future memory and neuromorphic computing systems. In this study, we have systematically modulated the surface defect states in IGZO thin films through Ar-plasma and ultraviolet ozone (UV-O3) treatments, and investigated their influence on the memristive switching characteristics in a W/IGZO/Pt device architecture. Notably, Ar-plasma enabled forming-free abrupt switching behavior, while UV-O3 led to a transition to gradual switching. The devices were subjected to 103 direct-current sweep cycles and 104 s of retention testing. Especially the Ar-plasma and untreated reference devices showed stable behavior, while the UV-O3 showed initial drifts in both measurements. Additionally, the absolute switching voltages of all samples are ≤1 V. These results demonstrate that the switching behavior of IGZO-based memristors can be effectively tuned through simple surface treatments while maintaining reliable device performance, underscoring the strong potential of IGZO as a versatile material for next-generation memristor technologies.
Keywords:
amorphous oxide semiconductor
digital and analog switching
forming-free
ReRAM
AI Summary
Key information extracted from the uploaded paper, including a brief overview, abstract, background, key highlights, visual analysis, and future outlook.
Journal
IF:
5.3
Papers:
913
Citations:
1.8W
Organization
Cited Papers