Advancing 2D CMOS electronics with high-performance p-type transistors

Jianfeng Jiang

doi:10.1038/s41467-025-66263-0

2025-11-20

彭练矛 (Lian‐Mao Peng) *

DOI：10.1038/s41467-025-66263-0

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摘要

En 中文

二维（2D）半导体已作为实现后硅电子学中互补金属氧化物半导体（CMOS）技术的有前景的候选材料。然而，二维p型与n型晶体管之间显著的性能差距阻碍了其即时工业应用。在本篇评论中，我们讨论了高性能二维p型晶体管的最新进展，概述了其潜在发展的路线图，并提出了基准性能指标以指导未来进展。基于二维半导体的p型晶体管的性能尚未达到实现具有竞争力的互补金属氧化物半导体（CMOS）电路所需的要求。在本篇评论中，作者讨论了二维p型晶体管的最新发展、当前挑战及未来展望。

Keyword:

2D semiconductors

p-type transistors

CMOS technology

post-silicon electronics

transistor performance

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Nature Communications

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15.7

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9.4W

被引数:

91.2W

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Massachusetts Institute of Technology

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2.4K

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被引数: 8

peking university

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11.9W

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被引数: 146

National University of Singapore

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7.6W

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被引数: 11.4W

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