返回
An Improved Monolithic GaN-Based Optocoupler With Annular Interdigitated Microstructures
DOI:10.1109/LSENS.2025.3629077.png)
摘要
En 中文
大多数商用光电耦合器至少集成两种光学元件,例如发光二极管(LED)和硅光电二极管(PD),它们充当简单的信号开关。然而,这种混合方法不仅使高级器件集成困难,还增加了制备复杂度并降低了可靠性。为实现紧凑、高性能的光电耦合器,本研究采用单片微加工工艺,将LED和PD集成在蓝宝石基氮化镓(GaN)外延片上的单芯片中。该设计涉及图案化环形叉指微结构,其中LED被PD环绕。该方法适用于批量制备,并通过环形和叉指结构扩大活性区域来提高耦合效率。测量结果表明,所提出的具有环形叉指结构的芯片在发光元件施加80 mA电流时产生0.176 mA的光电流,实现了0.23%的高电流传输比,表明其性能优异。此外,所提出的光电耦合器所需的PD数量更少,从而减小芯片尺寸并简化封装。
Keyword:
Light emitting diodes
Optical coupling
Optical device fabrication
Couplings
Substrates
Stimulated emission
Quantum well devices
Photodiodes
Optical switches
Phototransistors
Annular interdigitated microstructures
gallium nitride (GaN)-based optocoupler
monolithic microfabrication process
optical coupling efficiency
期刊
I
IF:
2.2
论文数:
354
被引数:
3.1K
机构
引用论文
Monolithic integration of ultraviolet light emitting diodes and photodetectors on a p-GaN/AlGaN/GaN/Si platform
OPTICS EXPRESS
IF3.3
A self-powered and high-voltage-isolated organic optical communication system based on triboelectric nanogenerators and solar cells
NANO ENERGY
IF17.1
Laser-Crystallized Epitaxial Germanium on Silicon-Based Near-Infrared Photodetector
IEEE SENSORS JOURNAL
IF4.5
Development of LTCC-packaged optocouplers as optical galvanic isolation for high-temperature applications
SCIENTIFIC REPORTS
IF3.9

