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An integrated silicon interferometric temperature sensor
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DOI：10.1016/S0924-4247(97)80273-7.png)
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摘要
En 中文
An integrated interferometric temperature sensor, realized on a silicon substrate, is presented. The device consists of an array of planar Fabry-Perot waveguiding cavities realized by plasma etching and standard microelectronic techniques. Experimental data demonstrating the monitoring of temperature variation both in modulus and sign, with a resolution of approximately 1 degrees C, are reported. The influence of the cavity losses and size on the sensor performance is discussed. The realization of amorphous silicon-based guided-wave sensors is then suggested to obtain better temperature resolution.
Keyword:
Fabry-Perot cavities
interferometric sensors
integrated sensors
silicon
temperature sensors
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4.9
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1.5W
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3.3W
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