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An NiO-PVA Composite and Polymer Electrode-Based Memristor Device with a High ON/OFF Ratio and Artificial Synaptic Response
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DOI：10.1021/acsaelm.6c00450.png)
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Abstract
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With the exponential growth of data-driven technology in modern society, limitations of conventional von Neumann computing have become evident. In this scenario, a two terminal memristor as a data storage and artificial synaptic device has emerged as the potential solution that can reduce the latency of series processing and lower power consumption by enabling parallel neuromorphic computation. Here, we have fabricated a memristive device with nickel oxide (NiO) and polyvinyl alcohol (PVA) composite as a switching layer. The device structure employs ITO/PEDOT:PSS as the top and bottom electrodes. An inclusion of low conductive PEDOT: PSS (Al4083) between ITO and the composite matrix as an interfacial layer significantly modulates the Schottky barrier height for enhanced charge injection, and interfacial switching occurs at a particular threshold voltage. A rectification ratio of ∼104, obtained from the (I−V) characteristics, is explained in the context of band alignment obtained from ultraviolet photoelectron spectroscopy (UPS) and fitting the (I−V) data based on the Richardson−Schottky and Poole−Frenkel emission model for charge injection phenomena. We have achieved excellent performance of a high on/off ratio of ∼105, retention over 103 s, endurance of 480 cycles, and low power consumption of 0.16 nW at a low operating switching voltage of 0.42 V. Furthermore, 3-bit multi-level storage capability was successfully demonstrated in the device for high-density memory applications. Analog resistive switching enabled us to emulate key artificial synaptic responses, in terms of excitatory post synaptic current (EPSC), paired pulse facilitation (PPF), long term potentiation/depression (LTP/LTD). The non-linearity and the extracted time constant obtained from the LTP/LTD align well with the learning and forgetting function observed in biological synapses. Overall, this work demonstrates a systematic study of a memristor device with an organic polymer top electrode and a hybrid oxide-polymer switching layer and their synergistic effect in improving overall device performance.
Keywords:
memristor
nickel oxide (NiO)
polymer electrode
PEDOT:PSS
NiO-PVA composite
artificial synaptic device
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