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Atomic Layer Deposition from Dissolved Precursors
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DOI：10.1021/acs.nanolett.5b01424.png)
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摘要
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We establish a novel thin film deposition technique by transferring the principles of atomic layer deposition (ALD) known with gaseous precursors toward precursors dissolved in a liquid. An established ALD reaction behaves similarly when performed from solutions. Solution ALD (sALD) can coat deep pores in a conformal manner. sALD offers novel opportunities by overcoming the need for volatile and thermally robust precursors. We establish a MgO sALD procedure based on the hydrolysis of a Grignard reagent.
Keyword:
Atomic layer deposition
LBL
SEAR
thin films
magnesium oxide
microfluidic
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9.1
论文数:
2.7W
被引数:
16.5W
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