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Atomically Abrupt Topological p-n Junction
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DOI：10.1021/acsnano.7b03880.png)
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摘要
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Topological insulators (TI's) are a new class of quantum matter with extraordinary surface electronic states, which bear great potential for spintronics and error-tolerant quantum computing. In order to put a TI into any practical use, these materials need to be fabricated into devices whose basic units are often p-n junctions. Unique electronic properties of a 'topological' p-n junction were proposed theoretically such as the junction electronic state and the spin rectification. However, the fabrication of a lateral topological p-n junction has been challenging because of materials, process, and fundamental reasons. Here, we demonstrate an innovative approach to realize a p-n junction of topological surface states (TSS's) of a three-dimensional (3D) topological insulator (TI) with an atomically abrupt interface. When a ultrathin Sb film is grown on a 3D TI of Bi2Se3 with a typical n-type TSS, the surface develops a strongly p-type TSS through the substantial hybridization between the 2D Sb film and the Bi2Se3 surface. Thus, the Bi2Se3 surface covered partially with Sb films bifurcates into areas of n- and p-type TSS's as separated by atomic step edges with a lateral electronic junction of as short as 2 nm. This approach opens a different avenue toward various electronic and spintronic devices based on well defined topological p-n junctions with the scalability down to atomic dimensions.
Keyword:
topological insulator
topological p-n junction
angle-resolved photoemission spectroscopy
scanning tunneling microscopy/spectroscopy
ultrathin Sb film
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期刊
IF:
16
论文数:
2.7W
被引数:
25.6W
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Experimental Realization of a Topological p-n Junction by Intrinsic Defect Grading.png)
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