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Atomically Resolved Electron Reflectivity at a Metal/Semiconductor Interface

delete2025-11-29
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OA
AI
D
Ding‐Ming Huang *
J
Jian‐Huan Wang
J
Jie‐Yin Zhang
Y
Yuan Yao
H
H. Q. Xu *
J
Jian-Jun Zhang *
DOI：10.1002/advs.202515182delete
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摘要

摘要

En 中文
通过分子束外延（MBE）在面心立方Al和金刚石晶格Ge之间实现了原子级平整的界面。基于扫描隧道显微镜（STM）的测量，证明了Al/Ge界面处电子反射率的原子级分辨横向周期性变化。在横向2 nm范围内，电子反射率的相对变化高达≈22%。推测该反射率变化源于Al/Ge界面处的局域电子态。该现象为通过STM检测异质结构中的埋藏界面态提供了一种原子级无损的方法。
Keyword:
metal/semiconductor interface
interfacial characterization
scanning tunneling microscopy
coherent tunneling
quantum well
interfacial scattering
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期刊

Advanced Science 封面图
Advanced Science
IF:
14.1
论文数:
1.8W
被引数:
11.5W

机构

B
Beijing National Laboratory for Condensed Matter Physics and Institute of Physics
学者数:
148
论文数: 47
被引数: 0
引用论文

引用论文

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