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Atomically thin gallium layers from solid-melt exfoliation
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DOI：10.1126/sciadv.1701373.png)
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摘要
En 中文
Among the large number of promising two-dimensional (2D) atomic layer crystals, true metallic layers are rare. Using combined theoretical and experimental approaches, we report on the stability and successful exfoliation of atomically thin gallenene sheets on a silicon substrate, which has two distinct atomic arrangements along crystallographic twin directions of the parent a-gallium. With a weak interface between solid and molten phases of gallium, a solid-melt interface exfoliation technique is developed to extract these layers. Phonon dispersion calculations show that gallenene can be stabilized with bulk gallium lattice parameters. The electronic band structure of gallenene shows a combination of partially filled Dirac cone and the nonlinear dispersive band near the Fermi level, suggesting that gallenene should behave as a metallic layer. Furthermore, it is observed that the strong interaction of gallenene with other 2D semiconductors induces semiconducting to metallic phase transitions in the latter, paving the way for using gallenene as promising metallic contacts in 2D devices.
Keyword:
TOTAL-ENERGY CALCULATIONS
LARGE-AREA
2D SEMICONDUCTOR
GRAPHENE FILMS
TRANSITION
MOS2
SILICENE
SINGLE
GROWTH
SUPERCONDUCTIVITY
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期刊
IF:
12.5
论文数:
2.0W
被引数:
18.1W
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