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Atomically thin quantum light-emitting diodes

delete2016-09-26
delete283
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OA
AI
C
Carmen Palacios-Berraquero
M
Matteo Barbone
D
Dhiren M. Kara
X
Xiaolong Chen
I
Ilya Goykhman
D
Duhee Yoon
A
Anna K. Ott
J
Jan Beitner
K
Kenji Watanabe
T
Takashi Taniguchi
A
Andrea C. Ferrari *
M
Mete Atatüre *
DOI：10.1038/ncomms12978delete
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摘要

摘要

En 中文
Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.
Keyword:
GRAPHENE
EMISSION
EMITTERS
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期刊

Nature Communications 封面图
Nature Communications
IF:
15.7
论文数:
9.3W
被引数:
91.2W

机构

N
national institute for materials science
学者数:
9.5K
论文数: 1.3W
被引数: 28
U
University of Cambridge
学者数:
7.7W
论文数: 7.1W
被引数: 13.7W
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