Bessel beams from semiconductor light sources

G. S. Sokolovskiĭ

doi:10.1016/j.pquantelec.2014.07.001

2014-07-01

PRE

DOI：10.1016/j.pquantelec.2014.07.001

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摘要

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We report on recent progress in the generation of non-diffracting (Bessel) beams from semiconductor light sources including both edge-emitting and surface-emitting semiconductor lasers as well as light-emitting diodes (LEDs) Bessel beams at the power level of Watts with central lobe diameters of a few to tens of micrometers were achieved from compact and highly efficient lasers. The practicality of reducing the central lobe size of the Bessel beam generated with high-power broad-stripe semiconductor lasers and LEDs to a level unachievable by means of traditional focusing has been demonstrated. We also discuss an approach to exceed the limit of power density for the focusing of radiation with high beam propagation parameter M-2. Finally, we consider the potential of the semiconductor lasers for applications in optical trapping/tweezing and the perspectives to replace their gas and solid-state laser counterparts for a range of implementations in optical manipulation towards lab-on-chip configurations. (C) 2014 Elsevier Ltd. All rights reserved.

Keyword:

Bessel beams

Semiconductor lasers

Light-emitting diodes

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Progress in Quantum Electronics

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