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Black phosphorus field-effect transistors
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DOI：10.1038/NNANO.2014.35.png)
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摘要
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Two-dimensional crystals have emerged as a class of materials that may impact future electronic technologies. Experimentally identifying and characterizing new functional two-dimensional materials is challenging, but also potentially rewarding. Here, we fabricate field-effect transistors based on few-layer black phosphorus crystals with thickness down to a few nanometres. Reliable transistor performance is achieved at room temperature in samples thinner than 7.5 nm, with drain current modulation on the order of 10(5) and well-developed current saturation in the I-V characteristics. The charge-carrier mobility is found to be thickness-dependent, with the highest values up to similar to 1,000 cm(2) V-1 s(-1) obtained for a thickness of similar to 10nm. Our results demonstrate the potential of black phosphorus thin crystals as a new two-dimensional material for applications in nanoelectronic devices.
Keyword:
ELECTRICAL-PROPERTIES
ELECTRONIC-STRUCTURE
PERFORMANCE
期刊
IF:
34.9
论文数:
4.8K
被引数:
8.1W
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