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Burning Graphene Layer-by-Layer
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DOI：10.1038/srep11546.png)
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摘要
En 中文
Graphene, in single layer or multi-layer forms, holds great promise for future electronics and high-temperature applications. Resistance to oxidation, an important property for high-temperature applications, has not yet been extensively investigated. Controlled thinning of multi-layer graphene (MLG), e.g., by plasma or laser processing is another challenge, since the existing methods produce non-uniform thinning or introduce undesirable defects in the basal plane. We report here that heating to extremely high temperatures (exceeding 2000 K) and controllable layer-by-layer burning (thinning) can be achieved by low-power laser processing of suspended high-quality MLG in air in cold-wall reactor configuration. In contrast, localized laser heating of supported samples results in non-uniform graphene burning at much higher rates. Fully atomistic molecular dynamics simulations were also performed to reveal details of oxidation mechanisms leading to uniform layer-by-layer graphene gasification. The extraordinary resistance of MLG to oxidation paves the way to novel high-temperature applications as continuum light source or scaffolding material.
Keyword:
HYPERTHERMAL ATOMIC OXYGEN
LIQUID-PHASE EXFOLIATION
REACTIVE FORCE-FIELD
MULTILAYER GRAPHENE
BASAL-PLANE
OXIDATION
GRAPHITE
REAXFF
MECHANISM
PLASMA
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期刊
IF:
3.9
论文数:
27.9W
被引数:
83.5W
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引用论文
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