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Chalcogen Incorporation in Cu−Sn−S Absorbers: Structural; Optical; and Photovoltaic Performance of Simulation-Guided CTS and CTSSe Solar Cells
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DOI：10.1021/acsaem.6c00809.png)
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Abstract
En 中文
This work presents a comprehensive experimental, simulation, and device performance comparative study of sustainable thin-film photovoltaic absorbers, Cu2SnS3 (CTS) and Cu2Sn(S,Se)3 (CTSSe). The CTS and CTSSe films were synthesized from a dip-coated Cu−Sn−S precursor layer followed by sulfurization and selenization processes, respectively. Structural analysis confirms the formation of a monoclinic phase in both films, while selenium incorporation promotes significant grain growth in CTSSe films. Both absorbers exhibited a high optical absorption coefficient (α > 105 cm−1) and suitable band gaps (1.0–1.6 eV) for photovoltaic applications. Furthermore, numerical device simulations were used to evaluate the photovoltaic performance of CTS and CTSSe-based absorbers. Device simulations combined with experimental analysis identified 475 °C as the optimal annealing temperature. Based on these simulation results, prototype devices were fabricated, obtaining commendable efficiencies of 2.2% and 3.0% for CTS and CTSSe-based devices, respectively.
Keywords:
Electrical conductivity
Peptides and proteins
Solar cells
Thermodynamic properties
Thin films
CTS
CTSSe
dip coating
SCAPS
thin-film solar cell
Journal
IF:
5.5
Papers:
1.1W
Citations:
4.5W
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