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Characterization of Anisotropic Optical Behavior in Phase-Change Material Sb2Se3
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DOI：10.1002/adom.71583.png)
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Abstract
En 中文
Phase-change materials with ultralow optical losses are enabling a new generation of reconfigurable photonic devices. Sb2Se3 has emerged as a leading candidate owing to its negligible optical losses across the visible and infrared, yet how polycrystallinity translates into optical inhomogeneity in thin-film form remains largely unexplored. Here, the anisotropic optical response of thermally crystallized Sb2Se3 films is systematically characterized by combining imaging Mueller matrix polarimetry, spatially resolved spectroscopic ellipsometry, and many-body perturbation theory calculations. X-ray diffraction reveals a fiber texture with (0k0) planes preferentially parallel to the film surface, while (00l) and (h00) planes are randomly oriented in-plane. Polarimetric imaging exposes pronounced linear birefringence and dichroism at the domain scale, with in-plane contrasts of |Δn| ≈ 0.5 and |Δk| ≈ 0.5 at 633 nm. Spatially resolved ellipsometry quantifies a refractive-index contrast of Δn = 0.13 between differently oriented crystallites at telecommunication wavelengths, sufficient to induce measurable phase errors in integrated photonic circuits. First-principles calculations reproduce the experimental dielectric functions quantitatively and establish the principal-axis ordering nc > na > nb. These results reveal that polycrystalline grain orientation is a critical, often overlooked source of optical inhomogeneity in Sb2Se3 films, with direct implications for the design of low-loss reconfigurable photonic devices.
Keywords:
dielectric function
ellipsometry
Mueller matrix polarimetry
optical anisotropy
phase-change materials
programmable photonics
Sb2Se3
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