.png){kind=icon}
.png){kind=icon}
Return
Chromium Cyanurate-Based Robust Resistive Switching Device Emulating Synaptic Plasticity for Neuromorphic Application
.png){kind=icon}
PRE
AI
U
D
A
P
S
R
DOI：10.1016/j.synthmet.2026.118161.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
• Chromium Cyanurate (Cr_Cyn) was synthesized via the cost-effective co-precipitation method. • The Ag/Cr_Cyn/FTO device was fabricated, which exhibits bipolar resistive switching with analog memory and neuromorphic behaviour. • The linear IV data were fitted to different conduction mechanisms, which revealed that the switching is due to trapping and detrapping of charge carriers. • The device exhibits high reliability for an endurance of 5000 cycles and retention of 5000 seconds.
Keywords:
Chromium Cyanurate
Resistive switching
Neuromorphic computing
Synaptic plasticity
Analog memory
Journal
IF:
4.6
Papers:
1.4W
Citations:
1.3W
Organization
Cited Papers