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Classical Hall effect in scanning gate experiments
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DOI：10.1103/PhysRevB.74.165426.png)
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摘要
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Scanning gate experiments on a two-dimensional electron gas in the regime of the classical Hall effect are presented. The Hall resistance is recorded while tuning the local potential by applying a voltage to the metallic tip of a scanning force microscope. In diffusive samples and at zero magnetic field an intriguing Hall resistance pattern arises that is attributed to tip-induced inhomogeneous current flow. Measurements at small, i.e., nonquantizing, magnetic fields reveal an additional Hall resistance pattern due to the tip-induced inhomogeneous electron density in the Hall cross. Deviations of the measurements on higher-mobility samples from expectations based on symmetry arguments are used to distinguish the diffusive from the mesoscopic transport regime. Finite-element-method modeling for the diffusive regime and trajectory calculations for ballistic electrons allow a concise interpretation of the measurements.
Keyword:
2-DIMENSIONAL ELECTRON-GAS
BALLISTIC REGIME
COHERENT
SPECTROSCOPY
RESISTANCE
TRANSPORT
BARRIERS
FIELD
EDGE
FLOW
期刊
IF:
3.7
论文数:
15.4W
被引数:
41.0W
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PHYSICAL REVIEW B
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PHYSICAL REVIEW BIF3.7
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