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Clustered Page-Level Mapping for Flash Memory-Based Storage Devices
DOI:10.1109/TCE.2015.7064110.png)
摘要
En 中文
Recent consumer devices such as smartphones, smart TVs and tablet PCs adopt NAND flash memory as storage device due to its advantages of small size, reliability, low power consumption, and high performance. The unique characteristics of NAND flash memory require an additional software layer, called flash translation layer (FTL), between traditional file systems and flash memory. In order to reduce the garbage collection cost, FTLs generally try to separate hot and cold data. Previous hot and cold separation techniques monitor the storage access patterns within storage device, or exploit file system hints from host system. This paper proposes a novel clustered page-level mapping, called CPM, which can separate hot and cold data efficiently by allocating different flash memory block groups to different logical address regions. CPM can reduce the FTL map loading overhead during garbage collection and it does not require any high-cost monitoring overhead or host hint. This paper also proposes a K-associative version of CPM, called K-CPM, which allows different logical address regions to share a physical block group in order to achieve high block utilizations. Experimental results show that CPM improves the storage I/O performance by about 54% compared with a previous page-level mapping FTL, and K-CPM further improves the performance by about 19.4% compared with CPM1.
Keyword:
NAND Flash Memory
Flash Translation Layer
Clustered Page Mapping
Embedded Storage
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10.9
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5.3K
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6.8K
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