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CMOS-Compatible WS2-Based All-Optical Modulator
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DOI：10.1021/acsphotonics.7b01206.png)
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摘要
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Two-dimensional materials are compatible with silicon complementary metal-oxide semiconductor processes. As such, the integration of two-dimensional materials with silicon-based semiconductors could lead to an amalgamation of the beneficial properties of both silicon and the two-dimensional material, thereby facilitating improved performance. Single-layer transition metal dichalcogenide materials such as MoS2, MoTe2, and WS2 are characterized by direct band gaps and possess high emission efficiencies. These materials are, therefore, perfectly suited for ameliorating the optical emission inadequacies of silicon-based materials. In this study, we integrate WS2 with a silicon-based silicon-nitride waveguide to modulate a 532 nm pump light source and successfully modulate and amplify an optical signal at 640 Compared to other modulators based on two-dimensional materials, e.g., graphene, the proposed WS2-based modulator theoretically incurs lower losses and exhibits higher contrast levels and signal-to-noise ratios. As the proposed modulator can compensate for losses and has potential for on-chip integration, it has excellent prospects for application in the field of on-chip optical interconnects.
Keyword:
transition metal dichalcogenide
optical modulator
intrachip optical connections
Si3N4 waveguide
WS2
期刊
IF:
6.7
论文数:
5.6K
被引数:
2.5W
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