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Complementary circuits based on solution processed low-voltage organic field-effect transistors

delete2009-11-01
delete16
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OA
AI
J
James M. Ball
P
Paul H. Wöbkenberg
F
Floris B. Kooistra
J
Jan C. Hummelen
D
Dago M. de Leeuw
D
Donal D. C. Bradley
T
Thomas D. Anthopoulos *
DOI:10.1016/j.synthmet.2009.08.019delete
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摘要

摘要

En 中文
The field of organic electronics is advancing quickly towards ultra low-cost, low-end applications and is expected to provide the necessary technology required for flexible/printed electronics. Here we address the need for solution processed low-voltage complementary logic in order to reduce power consumption of organic circuits and hence enable their use in portable, i.e. battery-powered applications. We demonstrate both p- and n-channel solution processed high performance organic field-effect transistors that operate at voltages below vertical bar 1.5 vertical bar V. The reduction in operating voltage is achieved by implementing ultrathin gate dielectrics based on solution processed self-assembled monolayers. This work demonstrates the feasibility of fabricating low-voltage complementary organic circuits by means of solution processing. (C) 2009 Elsevier B.V. All rights reserved.
Keyword:
OFET
Organic field-effect transistor
Low-voltage
Fullerene
P3HT
Self-assembled monolayer dielectric
Phosphonic acid
Organic complementary logic
Inverter
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期刊

Synthetic Metals 封面图
Synthetic Metals
IF:
4.6
论文数:
1.4W
被引数:
1.3W

机构

U
University of Groningen
学者数:
4.4W
论文数: 4.3W
被引数: 5.9W
I
Imperial College London
学者数:
8.3W
论文数: 7.3W
被引数: 11.1W
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