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Comprehensive review on electrical noise analysis of TFET structures
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DOI：10.1016/j.spmi.2021.107101.png)
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Abstract
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Tunnel Filed Effect Transistors (TFETs) have appeared as an alternative for conventional CMOS due to their advantages like very low leakage current and steep sub-threshold slope. In semiconductor devices, noise is considered an undesired signal that can deteriorate the desired signal. In TFET structures different noise sources affect the performance at different frequency ranges. This paper presents a comprehensive review of impact of electrical noise on the performance of various TFET structures. The impact of both low-frequency noise sources and high-frequency sources have been discussed thoroughly. The study of different types of electrical noises occur in simple TFET device and different structures of TFET is presented.
Keywords:
Tunneling
Flicker noise
Shot noise
Thermal noise
Random telegraph noise
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