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Construction of p-Bi2O3/n-ZnO nanowire heterojunctions with enhanced photoelectrochemical properties
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DOI：10.1039/d6cc01349j.png)
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Abstract
En 中文
Bi2O3/ZnO nanowire heterostructures were fabricated via hydrothermal synthesis. The optimized electrode (400 degrees C annealing) achieved a photocurrent density of 0.6 mA cm-2, three times higher than that of pristine ZnO, due to enhanced charge separation from the p-n junction formation.
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NANORODS
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4.2
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5.9W
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