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Contact Resistivity Decrease at a Metal/Semiconductor Interface by a Solid-to-Liquid Phase Transitional Metallo-organic Silver
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DOI：10.1021/am503548h.png)
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摘要
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We present a new approach to ensure the low contact resistivity of a silver paste at a metal/semiconductor interface over a broad range of peak firing temperatures by using a solid-to-liquid phase transitional metallo-organic silver, that is, silver neodecanoate. Silver nanodusters, thermally derived from silver neodecanoate, are readily dissolved into the melt of metal oxide glass fit even at low temperatures, at which point the molten metal oxide glass fit lacks the dissociation capability of bulk silver into Ag+ ions. In the presence of O2- ions in the melt of metal oxide glass fit, the redox reaction from Ag+ to Ag-0 augments the noble-metal-assisted etching capability to remove the passivation layer of silicon nitride. Moreover, during the cooling stage, the nucleated silver atoms enrich the content of silver nanocolloids in the solidified metal oxide glass layer. The resulting contact resistivity of silver paste with silver neodecanoate at the metal/semiconductor interface thus remains low between 4.12 and 16.08 m Omega cm(2)-whereas without silver neodecanoate, the paste exhibits a contact resistivity between 2.61 and 72.38 m Omega cm(2) in the range of peak firing temperatures from 750 to 810 degrees C. The advantage of using silver neodecanoate in silver paste becomes evident in that contact resistivity remains low over the broad range of peak firing temperatures, thus providing greater flexibility with respect to the firing temperature required in silicon solar cell applications.
Keyword:
metallo-organic silver
phase transition
noble-metal-assisted etching
silver nanocolloids
contact resistivity
silicon solar cell
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8.2
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6.1W
被引数:
42.1W
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ADVANCED MATERIALSIF26.8
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