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Controlled synthesis of cerium-based polishing powder with high trivalent cerium content via oxygen-free calcination and its impact on chemical mechanical polishing
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DOI:10.1016/j.jre.2026.07.032.png)
Abstract
En 中文
As the semiconductor industry increasingly demands higher surface quality standards for silicon wafers, conventional grinding materials struggle to simultaneously achieve high material removal rates and low surface roughness due to limitations such as low Ce3+ content and insufficient oxygen vacancies. To address this challenge, this study proposes an oxygen-free calcination strategy. Following oxygen-free calcination, the grinding particles exhibit characteristics including lattice expansion, increased interlayer spacing, and enhanced wettability. X-ray photoelectron spectroscopy (XPS) analysis reveals that the oxygen-free calcination samples (U-CeO2 and U-SiO2@CeO2) contain Ce3+ contents of 49.95% and 39.15%, respectively, representing significant increases of approximately 55.85% and 46.19% compared to oxygen calcination samples (CeO2 at 32.05% and U-SiO2@CeO2 at 26.78%), resulting from oxygen-free calcination favors the conversion of Ce4+ to Ce3+, accompanied by the formation of more abundant oxygen vacancies. Raman spectroscopy further confirms a concurrent rise in oxygen vacancy content. Regarding polishing performance, the material removal rates (MRR) for U-CeO2 and U-SiO2@CeO2 are (234.12±23.33) and (388.25±13.15) nm/min respectively, markedly superior to oxygen-containing sintered samples. Simultaneously, within a 5 μm ×5 μm area, the post-polishing surface roughness maintains both approximately 0.24 nm. Observed over a larger area (120 μm ×120 μm), the oxygen-free calcined samples (U-CeO2 and U-SiO2@CeO2) achieve surface roughness values of (0.557±0.12) and (0.757±0.26) nm respectively, both superior to oxygen-containing calcined samples. This study elucidates the key regulatory mechanism of Ce3+ enrichment on polishing efficiency, providing theoretical support for designing next-generation high-performance polishing materials.
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