Current-controlled antiferromagnetic memory

doi:10.1038/s41928-023-00982-4

2023-06-19

PRE

Pedram Khalili Amiri *

Francesca Garescì *

Giovanni Finocchio *

DOI：10.1038/s41928-023-00982-4

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摘要

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A magnetic random-access memory device that has an antiferromagnetic material as its storage element can be electrically read using ferromagnetic tunnelling.

Keyword:

MAGNETORESISTANCE

期刊

Nature Electronics

IF:

40.9

论文数:

1.7K

被引数:

2.1W

机构

University of Messina

学者数:

1.5W

论文数: 1.1W

被引数: 1.1W

Northwestern University

学者数:

6.2W

论文数: 5.3W

被引数: 3.9K

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