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Defect engineering of α-Ga2O3 for high-performance solar-blind UV photodetectors via low-temperature chemical bath deposition
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DOI：10.1016/j.jallcom.2026.190351.png)
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Abstract
En 中文
• Pressure-free bath deposition under 100 °C produces defect-tunable α-Ga₂O₃ nanorod films without high-pressure autoclaves. • Bath temperature modulates nanorod morphology, crystallinity and oxygen vacancies; higher temperature reduces deep traps validated by XPS, PL and SCLC. • The 90 °C fabricated α-Ga₂O₃ MSM solar-blind UV detector reaches 3.093 A W⁻¹ responsivity and 8.83 × 10 ¹ ² Jones detectivity at 265 nm with 3 V bias.
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