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Diffusion doping in quantum dots: bond strength and diffusivity

delete2017-01-01
delete24
PRE
AI
A
Avijit Saha
M
Mahima Makkar
A
Amitha Shetty
K
Kushagra Gahlot
A
A. R. Pavan
R
Ranjani Viswanatha *
DOI:10.1039/c6nr09839hdelete
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摘要

摘要

En 中文
Semiconducting materials uniformly doped with optical or magnetic impurities have been useful in a number of potential applications. However, clustering or phase separation during synthesis has made this job challenging. Recently the inside out diffusion doping was proposed to be successful in obtaining large sized quantum dots (QDs) uniformly doped with a dilute percentage of dopant atoms. Herein, we demonstrate the use of basic physical chemistry of diffusion to control the size and concentration of the dopants within the QDs for a given transition metal ion. We have studied three parameters; the bond strength of the core molecules and the diffusion coefficient of the diffusing metal ion are found to be important while the ease of cation exchange was not highly influential in the control of size and concentration of the single domain dilute magnetic semiconductor quantum dots (DMSQDs) with diverse dopant ions M2+ (Fe2+, Ni2+, Co2+, Mn2+). Steady state optical emission spectra reveal that the dopants are incorporated inside the semiconducting CdS and the emission can be tuned during shell growth. We have shown that this method enables control over doping percentage and the QDs show a superior ferromagnetic response at room temperature as compared to previously reported systems.
Keyword:
DOPED SEMICONDUCTOR NANOCRYSTALS
DILUTE MAGNETIC SEMICONDUCTOR
CORE/SHELL NANOCRYSTALS
ZNSE NANOCRYSTALS
MANGANESE
NANOPARTICLES
LUMINESCENCE
SPINTRONICS
CHEMISTRY
EXCHANGE
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期刊

Nanoscale 封面图
Nanoscale
IF:
5.1
论文数:
3.0W
被引数:
11.6W

机构

D
department of science & technology (india)
学者数:
1.6W
论文数: 1.6W
被引数: 9
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