.png){kind=icon}
返回
Dual-Ferroelectric-Coupling-Engineered Two-Dimensional Transistors for Multifunctional In-Memory Computing
.png){kind=icon}
OA
AI
DOI：10.1021/acsnano.2c00079.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
In-memory computing featuring a radical departure from the von Neumann architecture is promising to substantially reduce the energy and time consumption for data-intensive computation. With the increasing challenges facing silicon complementary metal-oxide-semiconductor (CMOS) technology, developing in-memory computing hardware would require a different platform to deliver significantly enhanced functionalities at the material and device level. Here, we explore a dual-gate two-dimensional ferroelectric field-effect transistor (2D FeFET) as a basic device to form both nonvolatile logic gates and artificial synapses, addressing in-memory computing simultaneously in digital and analog spaces. Through diversifying the electrostatic behaviors in 2D transistors with the dual-ferroelectric-coupling effect, rich logic functionalities including linear (AND, OR) and nonlinear (XNOR) gates were obtained in unipolar (MoS2) and ambipolar (MoTe2) FeFETs. Combining both types of 2D FeFETs in a heterogeneous platform, an important computation circuit, i.e., a half-adder, was successfully constructed with an area-efficient two-transistor structure. Furthermore, with the same device structure, several key synaptic functions are shown at the device level, and an artificial neural network is simulated at the system level, manifesting its potential for neuromorphic computing. These findings highlight the prospects of dual-gate 2D FeFETs for the development of multifunctional in-memory computing hardware capable of both digital and analog computation.
Keyword:
ferroelectric field-effect transistors
2D materials
logic-in-memory
artificial synapse
dual-gate structure
期刊
IF:
16
论文数:
2.7W
被引数:
25.6W
机构
引用论文
X-SRAM: Enabling In-Memory Boolean Computations in CMOS Static Random Access MemoriesX-sram: 在CMOS静态随机存取存储器中启用内存中的布尔计算
OAAI
OAAI分享收藏Mimicking biological neurons with a nanoscale ferroelectric transistor用纳米级铁电晶体管模拟生物神经元.png)
NanoscaleOAAI
NanoscaleIF5.1
OAAI分享收藏分享收藏Nonvolatile Ferroelectric Memory Circuit Using Black Phosphorus Nanosheet-Based Field-Effect Transistors with P(VDF-TrFE) Polymer使用具有P (vdf-trfe) 聚合物的基于黑色磷纳米片的场效应晶体管的非易失性铁电存储器电路ACS NANO
ACS NANOIF16
PREAI
分享收藏Fatal and Unanticipated Cardiorespiratory Disease in a Two-Year-Old Child with Hurler Syndrome Following Successful Stem Cell TransplantJIMD ReportsOAAI
JIMD ReportsIF0
OAAI分享收藏
查看更多内容