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Effect of magnesium doping on NiO hole injection layer in quantum dot light-emitting diodes
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DOI：10.1515/nanoph-2024-0239.png)
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Abstract
En 中文
This study reports on the fabrication of quantum dot light-emitting diodes (QLEDs) with an ITO/Ni1-xMgx O/SAM/TFB/QDs/ZnMgO/Al structure and investigates the effects of various Mg doping concentrations in NiO on device performance. By doping Mg into the inorganic hole-injection layer NiO (Ni1-xMg x O), we improved the band alignment with the hole-injection layer through band tuning, which enhanced charge balance. Optimal Mg doping ratios, particularly a Ni0.9Mg0.1O composition, have demonstrated superior device functionality, underscoring the need for fine-tuned doping levels. Further enhancements were achieved through surface treatments of Ni0.9Mg0.1O with UV-Ozone (UVO) and thermal annealing (TA) of the ZnMgO electron transport layer. Consequently, by optimizing Mg-doped NiO in QLED devices, we achieved a maximum external quantum efficiency of 8.38 %, a brightness of 66,677 cd/m(2), and a current efficiency of 35.31 cd/A, indicating improved performance. The integration of Mg-doped NiO into the QLED structure resulted in a device with superior charge balance and overall performance, which is a promising direction for future QLED display technologies.
Keywords:
QLED
NiO
Ni1-xMgxO
ZnMgO
hole injection layer
Journal
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1.6W