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Effect of oxygen flow on transparent in-doped ZnO electrodes for NiO/ ZnO junctions
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DOI：10.1016/j.solidstatesciences.2026.108272.png)
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Abstract
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The effect of oxygen gas flow rate on the electrical and thermoelectric characteristics of sputtered In-doped ZnO thin films was carefully examined. The investigation studied the influence of oxygen-controlled growth on enhancing the performance of NiO/ZnO heterojunctions. The In-doped ZnO thin films demonstrated an important carrier concentration reaching 1021 cm- 3, electron mobility between 2.14 and 8.56 cm2 V- 1 s-1, and a low resistivity of 10-4 Omega cm. The Seebeck coefficient ranged from 31.45 to 137.04 mu V K- 1, and the power factor markedly increased from 118.03 to 703.11 mu W m-1 K-2 as the oxygen flow rate increased. The fabricated NiO/ ZnO heterojunction exhibited a type-II band alignment, an open-circuit voltage ranging from 1.70 to 2.18 V, an effective potential barrier of roughly 0.5 eV, and an ideality factor as low as 3.86. The optimization of the Indium-ZnO electrode layer significantly reduced leakage current and enhanced diode performance. Under 365 nm light, the heterostructure of NiO/ZnO demonstrated distinct photodiode characteristics with a photosensitivity of around 10.7. The findings suggest that oxygen-controlled In-doped ZnO thin films may function as effective transparent electrodes, presenting a viable substitute for ITO in NiO/ZnO-based optoelectronic devices and UV photodetectors.
Keywords:
Metal-oxides
ZnO
Radio-frequency reactive magneton sputter
Indium-doped ZnO
Transparent conductive oxide
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