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Effect of vacuum annealing temperature on microstructure and tribological properties of CVD-SiC

delete2026-06-16
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PRE
AI
R
Ran Liu
S
Song Yang *
Q
Qingzhi Ma
R
Renhao Hu *
X
Xuhua Lu
Y
YunZhou Xue *
S
Shaolong He
L
Lianyi Xu *
Y
Ying Wang *
R
Rongbin Li
P
Pan Gao *
DOI:10.1016/j.vacuum.2026.115580delete
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Abstract

Abstract

En 中文
Chemical vapor deposition (CVD) silicon carbide (SiC) coatings are critical in aerospace and semiconductor fields for their inherent thermal stability and wear resistance. However, their structural and tribological degradation under extreme high-temperature vacuum conditions remains poorly defined, challenging their long-term reliability. This study investigates the microstructural and chemical bonding evolution of CVD-SiC coatings during high-vacuum annealing (1000-1800 °C). Results show that 1400 °C annealing facilitates point defect annihilation and micro-void elimination, causing significant structural densification. This physical strengthening enhances load-bearing capacity, reducing the friction coefficient and wear track width. Conversely, at 1800 °C, the system exceeds its thermodynamic stability limit. Compositional analyses (EDS/XPS) reveal severe silicon sublimation, driving residual carbon reconstruction into a graphitized network (91.7 at.% C). Under sliding shear stress, this carbon layer plastically deforms into a continuous tribofilm, providing an apparent solid lubrication effect with an ultralow friction coefficient (0.30). However, this chemically driven degradation irreversibly compromises macroscopic structural integrity, inducing intergranular microcracks. Ultimately, within the tested temperature range, 1400 °C is identified as the most favorable condition to maximize physical densification and wear resistance prior to severe high-temperature chemical decomposition.

Journal

Vacuum cover
Vacuum
IF:
3.9
Papers:
1.4W
Citations:
2.5W

Organization

C
chint group co., ltd
Scholars:
2
Papers: 2
Citations: 0
Y
yongjiang laboratory
Scholars:
327
Papers: 251
Citations: 2
S
Shanghai Dianji University
Scholars:
1.4K
Papers: 908
Citations: 539
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