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Efficient High-Power Laser Diodes
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DOI：10.1109/JSTQE.2013.2239961.png)
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Abstract
En 中文
High-power broad-area diode lasers are the most efficient light sources, with 90-mu m stripe GaAs-based 940-980 nm single emitters delivering > 10W optical output at a power conversion efficiency eta E (10W)> 65%. A review of efforts to increase eta E is presented here and we show that for well-optimized structures, the residual losses are dominated by the p-side waveguide and non-ideal internal quantum efficiency eta i. The challenge in measuring efficiency to sufficient precision is also discussed. We show that.E can most directly be improved using low heat sink temperature T-HS with eta E (10 W) reaching > 70% at T-HS = -50 degrees C. In contrast, increases in eta E at T-HS = 25. C require improvements in both material quality and design, with growth studies targeting increased eta i and reduced threshold current and design studies seeking to mitigate the impact of the p-side waveguide. Extreme, double asymmetric (EDAS) designs are shown to substantially reduce p-side losses, at the penalty of increased threshold current. The benefit of EDAS designs is shown here using diode lasers with 30-mu m stripes, (in development as high beam quality sources for material processing). Efficiency increases of similar to 10% relative to conventional designs are demonstrated at high powers.
Keywords:
Power conversion
quantum-well lasers
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