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Electric field engineering using quantum-size-effect-tuned heterojunctions

delete2013-07-03
delete17
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OA
AI
A
Adinolfi, V.
宁
宁志军 (Zhijun Ning)
J
Jixian Xu
S
Silvia Masala
D
David Zhitomirsky
S
Susanna M. Thon
E
Edward H. Sargent *
DOI:10.1063/1.4813074delete
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摘要

摘要

En 中文
A quantum junction solar cell architecture was recently reported that employs colloidal quantum dots (CQDs) on each side of the p-n junction. This architecture extends the range of design opportunities for CQD photovoltaics, since the bandgap can be tuned across the light-absorbing semiconductor layer via control over CQD size, employing solution-processed, room-temperature fabricated materials. We exploit this feature by designing and demonstrating a field-enhanced heterojunction architecture. We optimize the electric field profile within the solar cell through bandgap engineering, thereby improving carrier collection and achieving an increased open circuit voltage, resulting in a 12% improvement in power conversion efficiency. (C) 2013 AIP Publishing LLC.
Keyword:
SOLAR-CELLS
DOT PHOTOVOLTAICS
EFFECT TRANSISTORS
SOLIDS
PHOTODETECTORS
PBSE
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期刊

Applied Physics Letters 封面图
Applied Physics Letters
IF:
3.6
论文数:
10.4W
被引数:
17.8W

机构

K
king abdullah university of science & technology
学者数:
1.3W
论文数: 1.3W
被引数: 32
U
university of toronto
学者数:
14.8W
论文数: 12.0W
被引数: 165
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