Electric-field-enhanced uniform metal-assisted chemical etching: Directional control and mechanism for ultra-high-aspect-ratio silicon structures

2026-07-29

PRE

Daojiang Yu

Chongteng Zhang

Youkang Shen

Liyi Li *

DOI：10.1016/j.sna.2026.118311

Original

Original request for help

Save

Abstract

En 中文

• Systematically investigate interfacial charge regulation in electric bias-assisted MACE (EMaCE). • Clarify the mechanism of interfacial charge transfer under electric bias during EMaCE. • Precisely fabricate silicon nanostructures with an aspect ratio exceeding 149:1 via EMaCE. • Provide new insights for the precise control of MACE-based micro/nanofabrication.

Keywords:

Electric bias-attenuated metal-assisted chemical etching

High-aspect-ratio

Silicon via structures

Wet etching

Simulation

Etching interfaces

Electric-field-enhanced uniform metal-assisted chemical etching: Directional control and mechanism for ultra-high-aspect-ratio silicon structures

Abstract

Journal

Organization

Cited Papers

Citing Papers