Electrically addressing a single self-assembled quantum dot

Ellis, DJP

doi:10.1063/1.2190451

2006-03-30

DOI：10.1063/1.2190451

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摘要

En 中文

We report on the use of an aperture in an aluminum oxide layer to restrict current injection into a single self-assembled InAs quantum dot from an ensemble of such dots within a large mesa. The insulating aperture is formed through the wet oxidation of a layer of AlAs. Under photoluminescence we observe that only one quantum dot in the ensemble exhibits a Stark shift, and that the same single dot is visible under electroluminescence. Autocorrelation measurements performed on the electroluminescence confirm that we are observing emission from a single quantum dot. (c) 2006 American Institute of Physics.

Keyword:

LIGHT-EMITTING-DIODES

PILLAR MICROCAVITIES

PHOTON SOURCE

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期刊

Applied Physics Letters

IF:

3.6

论文数:

10.4W

被引数:

17.8W

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