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Electromigration threshold in copper interconnects

delete2001-06-04
delete111
PRE
AI
W
Wang, PC *
F
Filippi, RG
DOI:10.1063/1.1371251delete
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摘要

摘要

En 中文
The electromigration threshold in copper interconnects is reported in this study. The length-dependent electromigration degradation rate is observed and quantified in the temperature range of 295-400 degreesC. Based on the Blech electromigration model [I. A. Blech, J. Appl. Phys. 47, 1203 (1976)], a simplified equation is proposed to analyze the experimental data from various combinations of current density and interconnect length, as well as to estimate the electromigration threshold product of current density and line length, (jL)(th), at a certain temperature. The resulting (jL)(th) value appears to be temperature dependent, decreasing with increasing temperature in the tested range between 295 and 400 degreesC. (C) 2001 American Institute of Physics.
Keyword:
ALUMINUM FILMS
THIN-FILMS
STRESS
CU
KINETICS
AL(CU)
DRIFT
LINES

期刊

Applied Physics Letters 封面图
Applied Physics Letters
IF:
3.6
论文数:
10.4W
被引数:
17.8W

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