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Electronic properties of arsenene nanoribbons for FET application
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J
陈
Y
L
刘
路
R
DOI：10.1007/s11082-019-2154-8.png)
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Abstract
En 中文
In this paper, we study the electronic properties of arsenene nanoribbons (AsNRs) by using first-principles density functional theory calculations. The effect of ribbon width and external transverse electric field on the band gap of AsNRs has been lucubrated. AsNRs show a giant Stark effect with external transverse electric field and the carriers mainly transport along the center of nanoribbons. The results show that the impurity and vacancy defects at the edge of AsNRs have little effect on its electronic properties. In addition, the AsNRs-based field-effect transistor shows a high on/off ratio up to 9.38 x 10(3). Our results gain a deep insight into the electronic properties of AsNRs, we expect these findings can be instrumental for further experimental investigation of AsNRs-based devices.
Keywords:
Arsenene nanoribbons
DFT
Transport channel
FET
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